Dielectric breakdown mechanism of Hf -silicate high-k gate dielectrics.
نویسندگان
چکیده
منابع مشابه
Polarity Dependent Reliability of Advanced MOSFET Using MOCVD Nitrided Hf-silicate High-k Gate Dielectric
We report reliability of MOSFETs with MOCVD nitrided Hfsilicate (HfSiON) high-k gate dielectric. HfSiON has shown superior electrical characteristics, such as low leakage relative to SiO2 and high mobility compared to other high-k gate dielectrics [1]. SILC is found to be comparable to SiO2 and better than Hf-silicate without nitridation. TDDB and BTI reveal significant difference between inver...
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ژورنال
عنوان ژورنال: IEEJ Transactions on Sensors and Micromachines
سال: 2004
ISSN: 1341-8939,1347-5525
DOI: 10.1541/ieejsmas.124.167